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Philips Semiconductors Linear Products
Product specification
Voltage comparator
NE529
DESCRIPTION
The NE529 is a high-speed analog voltage comparator which, for the first time, mates state-of-the-art Schottky diode technology with the conventional linear process. This allows simultaneous fabrication of high-speed TTL gates with a precision linear amplifier on a single monolithic chip.
PIN CONFIGURATIONS
D, N Packages
V1 + 1 14 13 12 11 10 9 8 V2 +
NC 2 INPUT A
3 4
STROBE A NC OUTPUT A GND
OUTPUT B
FEATURES
INPUT B
* 10ns propagation delay * Complementary output gates * TTL or ECL compatible outputs * Wide common-mode and differential voltage range * Typical gain 5000
APPLICATIONS
NC 5
V1 - 6
NC 7
TOP VIEW
STROBE B
BLOCK DIAGRAM
V1 + STROBE A V2 + OUTPUT A INPUT A INPUT B OUTPUT B V1 - STROBE B
* A/D conversion * ECL-to-TTL interface * TTL-to-ECL interface * Memory sensing * Optical data coupling
ORDERING INFORMATION
DESCRIPTION 14-Pin Plastic Dual In-Line Package (DIP) 14-Pin Small Outline (SO) Package
V1 + R1 20K Q3 D1 D2 D3 R2 1.5K R3 1.5K Q4 Q5 Q12 750 R11 750 R12 Q13 Q14 6.13K R9 Q10 Q11 D6 Q6 Q27 R4 V1 - 200 R5 300 R6 300 R7 100 R8 200 Q7 Q8 Q9 D7 D8 D9 STROBE B D11 Q21 250 R26 R24 4K Q22 Q25 R25 500 Q26 R21 4K R22 1.5K Q23 Q24 OUTPUT B 55 R23 250 R19 R20 500 Q20 R10 20K D10 R18 Q15 Q26 Q19 4K Q17 Q18 OUTPUT A 1K R13 1K R14
TEMPERATURE RANGE 0 to +70C 0 to +70C
STROBE A
ORDER CODE NE529N NE529D
V2 +
DWG # 0405B 0175D
R15
4K
R16
1.5K
R17
55
D4 INPUT A Q1 Q2 INPUT B
D5
GND
August 31, 1994
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853-0902 13721
Philips Semiconductors Linear Products
Product specification
Voltage comparator
NE529
ABSOLUTE MAXIMUM RATINGS
SYMBOL V1+ V1V2+ VOUT VIN VCM PD Positive supply voltage Negative supply voltage Gate supply voltage Output voltage Differential input voltage Input common mode voltage Maximum power dissipation1 TA=25C (still-air) N package D package TA TSTG TSOLD Operating temperature range Storage temperature range Lead soldering temperature (10 sec max) NOTES: 1. Derate above 25C at the following rates: N package at 11.5mW/C D package at 8.3mW/C +300 C 1420 1040 0 to +70 -65 to +150 mW mW C C PARAMETER RATING +15 -15 +7 +7 5 6 UNIT V V V V V V
August 31, 1994
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Philips Semiconductors Linear Products
Product specification
Voltage comparator
NE529
DC ELECTRICAL CHARACTERISTICS
V1+=+10V, V2+=+5.0V, V1-=-10V, unless otherwise specified. SYMBOL PARAMETER TEST CONDITIONS NE529 Min Typ Max 6 10 5 VIN=0V 2 VIN=0V -5 0 20 50 5 15 UNIT
Input characteristics
VOS IBIAS IOS VCM Input offset voltage @ 25C Over temperature range Input bias current @ 25C Over temperature range Input offset current @ 25C Over temperature range Common-mode voltage range Output voltage VOUT "1" state "0" state Strobe inputs "0" Input current1 "1" Input current @ 25C1 Over temperature range "0" input voltage "1" input voltage ISC Short-circuit output current Supply voltage V1+ V1V2+ Supply current I1+ I1I2+ NOTES: 1. See logic function table. V1+=10V, V1-=-10V V2+=5.25V Over temp. Over temp. Over temp. 5 10 20 mA mA mA 5 -6 4.75 5 10 -10 5.25 V V V V2+=5.25V, VSTROBE=0.5V V2+=5.25V, VSTROBE=2.7V V2+=5.25V, VSTROBE=2.7V V2+=4.75V V2+=4.75V V2+=5.25V, VOUT=0V 2.0 -18 -70 -2 100 200 0.8 mA A A V V mA V2+=4.75V, ISOURCE=-1mA V2+=4.75V, ISINK=10mA 2.7 3.3 0.5 V V mV A A A V
Gate characteristics
Power supply requirements
AC ELECTRICAL CHARACTERISTICS
TA=25C (See AC test circuit). SYMBOL tR tPLH tPHL PARAMETER Transient response Propagation delay time Low-to-high High-to-low Delay between output A and B Strobe delay time tON tOFF turn-on time turn-off time 6 6 ns ns 12 10 2 22 20 5 ns ns ns TEST CONDITIONS VIN=100mV step LIMITS Min Typ Max UNIT
August 31, 1994
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Philips Semiconductors Linear Products
Product specification
Voltage comparator
NE529
TYPICAL PERFORMANCE CHARACTERISTICS
Input Currents vs Temperature
12 INOUR CURRENT -- A 10 SUPPLY CURRENT -- mA 8 6 4 2 0 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 TEMPERATURE -- oC OFFSET CURRENT BIAS CURRENT 15 14 13 7 6 5 4 3 2 -50 -25 0 I2 + V2 + = 5.0V I1 - V1 - = 10V I1 + V1 + = 10V POWER DISSIPATION -- mW
Supply Currents vs Temperature
160 150 140 130 120 110 100 5
Power Dissipation vs Supply Voltage
V2 + = 5.0V TA = 25oC
25
50
75
100
6
7
8
9
10
TEMPERATURE -- oC
SUPPLY VOLTAGE (V1 +, V1 -) -- VOLTS
Supply Current vs Supply Voltage
8
OUTPUT VOLTAGE -- V
Output Propagation Delays
5 4 3 2 1 INPUT VOLTAGE -- mV 0 +100 0 -100 0 5 10 15 OVERDRIVE 20 25 30 INPUT A OUTPUT B INPUT VOLTAGE -- mV OUTPUT A OUTPUT VOLTAGE -- V V1 + = 10V, V1 - = -- 10V V2 + = 5.0V 5 4 3 2 1 0 +100 0 -100
Response Time for Various Input Overdrives
V1 + = 10V, V1 - = -- 10V V2 + = 5.0V OVERDRIVE
+10mV +5mV
7
SUPPLY CURRENT -- mA
6 5 4 3 2 1 0 5 6
T1 -
TA = 25oC V2 + = 5.0V
OUTPUT A
+50mV +25mV
T2 + T1 +
+15mV
OVERDRIVE INPUT B
7
8
9
10
0
5
10
15
20
25
30
SUPPLY VOLTAGE (V1 +, V1 -) -- VOLTS
TIME -- ns
TIME -- ns
RESPONSE TIME TEST CIRCUIT
(V1 +) +10 10F INPUT PROBE 500 1 + .1 1K 13 14 11 CR1 9 CL R3 6 8 1K (V1 -) -10 .1 10 CR3 CR4 CR2 .1 OUTPUT PROBE +5 + (V2 +) +5 10F
5K
R1 INPUT R2 51 51 +5 3 4 RL
+5
NOTES: CR1 -- CR4 = IN914 R1 selected for 15.1 divider R2, 3 selected for 100mV at Pin 4
Input PRR = 1MHz Pw = 50ns Tr = Tf = 2ns Amplitude = 3.00V
Output RL = 390 CL = 25pF (including stray capacitance
August 31, 1994
323
Philips Semiconductors Linear Products
Product specification
Voltage comparator
NE529
APPLICATIONS
One of the main features of the device is that supply voltages (V+, V-) need not be balanced, as in the following diagrams. For proper operation, however, negative supply (V-) should always be at least 6V more than the ground terminal (pin 6). Input Common-Mode
range should be limited to values of 2V less than the supply voltages (V+ and V-) up to a maximum of 5V as supply voltages are increased. It is also important to note that Output A is in phase with Input A and Output B is in phase with Input B.
LOGIC FUNCTION
VID (A+, B-) VID-VOS -VOSTYPICAL APPLICATIONS
R2 1 3 14 11 Q 3 529N R2 Q 4 6 R1 R1 - 6V 10 9 INPUT R1 R1 - 10V ECL 4 6 10 9 Q + 5V R2 1 14 11 TTL OUTPUTS Q + 5V
529N
Photodiode Detector
ECL-to-TTL Interface
+ 5V VREF + 5V 3R1 1103 MOS RAM 1 3 14 11 Q TTL INPUT 3 1 14 11 2K 2K
529N Q 4 6 100 100 - 6V 10 R1 R1 9 4 6
529N 9 10
- 10V
- 5.2V
MOS Memory Sense AMP
TTL-to-ECL Interface
August 31, 1994
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